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LED Sapphire Substrate Wafer Processing

Single-side lapping process: we can provide 3um water-based, oil-based diamond slurry, used with copper disc and resin copper plate.-js9905.com金沙网站

Single-side polishing process: we can provide silica polishing slurry, used with polishing pad.

LED chip back side copper lapping process: we can provide 6um water-based, oil-based diamond slurry.

 

 

85058金沙

LED Sapphire Substrate Wafer Processing Example:

Slurry size: 3um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding plate: resin copper plate, diameter 910mm;

3, Add slurry method: spray;

4, The process parameters:

5, Processing results:

 

Below plate speed(rpm

Pressure head speed(rpm

Single head pressure(kg

Single head number(sheet

Single disc number(sheet

Disc temperature control(℃)

50

50

60

16

64

≤30

Removal rate: 0.8-1.0um / min;

Yield: ≥98%;

Slurry size: 6um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding plate: copper plate, diameter 910mm;

3, Add slurry method: spray;

4, The process parameters:

 

Below plate speed(rpm

Pressure head speed(rpm

Single head pressure(kg

Single head number(sheet

Single disc number(sheet

Disc temperature control(℃)

50

50

80

16

64

≤30

5, processing results:

Removal rate: 2.5-3.0um / min;

Yield: ≥98%;

 

Sapphire Window Processing

Double-side lapping process: we can provide 3um water-based diamond slurry, used with resin copper plate;

We can provide 18um water-based diamond slurry, used with polishing pad;-85058金沙

Double-side polishing process:we can provide silica and alumina polishing slurry, used with polishing pad.

Sapphire Window Processing Example:

Slurry size: 3um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding plate: resin copper plate, diameter 910mm;

3, Add slurry method: spray;

4, The process parameters:

 

Below plate speed(rpm

Pressure head speed(rpm-金莎67783

Single head pressure-4136金沙(kg

Single head number(sheet

Single disc number(sheet

Disc temperature control(℃)

50

50

90

16

64

≤30

5, processing results:

Removal rate: 1.0-1.2um / min; Yield: ≥98%;

Slurry size: 18um polycrystalline diamond slurry;

1, Processing wafer: C plane of the sapphire wafer, 2 inches;

2, Grinding pad: 18B, double-side processing, high hardness grinding pad;

3, Add slurry method: dropping;

4, The process parameters:

  

Below plate speed(rpm

pressure(kg

Number of sheets processed(sheet

Polishing pad
style

30

420

140

Under the dense sparse

5, processing results:

Removal rate: 0.7-0.9um / min; Yield: ≥98%;